Staff Memory Design Engineer, HBM

Responsibilities

• Design digital, analog, and memory core circuits using CMOS logic and transistors from concept to solution
• Create optimized floorplans for circuit placement, routing, power delivery, sense margins, and array timing
• Conduct circuit simulations using FINESIM, HSPICE, and VERILOG to analyze power, performance, and reliability
• Validate builds through reticle experiments and simulation-to-silicon correlation
• Collaborate with global teams including product engineering, test, process integration, and assembly to ensure manufacturability
• Manage layout resources, track project tasks, and lead design reviews to communicate technical decisions

Requirements

• Proficiency with Cadence Virtuoso and experience simulating with FINESIM, HSPICE, and VERILOG
• Strong coursework and understanding of CMOS Circuit Design, VLSI, and Analog Circuit Design
• Expertise in DRAM subsystem architecture, specification, or design
• Proven analytical and problem-solving skills with a record of technical innovation
• Ability to collaborate across multiple engineering organizations to optimize quality and cost

Preferred Qualifications

• BS or MS in Electrical Engineering or a related field
• 6+ years of experience in DRAM design, product, or system development
• Deep knowledge of industry-specific technologies and competitive trends
• Excellent communication and interpersonal skills for cross-functional collaboration

Benefits

• Choice of medical, dental, and vision plans
• Income protection programs for illness or injury
• Paid family leave
• Robust paid time-off program and paid holidays

About the Company

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.