Staff Engineer, SRAM Circuit Design

Responsibilities

• Design and develop SRAM memory arrays, including bit cells, sense amplifiers, decoders and control circuits for advanced process nodes (2nm, 3nm, 5nm)
• Optimize SRAM designs for performance, power, area (PPA) and yield
• Develop custom layouts and perform physical design verifications (DRC, LVS)
• Evaluate trade-offs between speed, power, and area to meet design targets
• Develop and improve SRAM design methodologies and automation scripts
• Work with product and test engineers to support silicon bring-up
• Mentor junior engineers on SRAM design techniques and best practices
• Perform extensive circuit simulations using HSPICE, finesim, or Cadence Spectre

Requirements

• Bachelor's degree in electrical engineering with 10+ years of experience, or Master's degree with 8+ years of experience
• Proven track record in SRAM or memory circuit design in advanced process nodes
• Strong understanding of semiconductor device physics (FinFET, GAA, SOI)
• Expertise in SRAM architecture (bitcells, sense amplifiers, write drivers)
• Proficiency in circuit simulation tools (Spectre, HSPICE, Cadence Virtuoso)
• Knowledge of scripting languages like Python, Perl, or TCL
• Experience with advanced technology nodes (5nm, 3nm, or beyond)
• Background in silicon debug and root-cause analysis

About the Company

Samsung Semiconductor provides technology solutions that power smartphones, electric vehicles, hyperscale data centers, and IoT devices, pushing the boundaries of semiconductor design.