Senior Power Device Engineer

About the Company

Cambridge GaN Devices (CGD) is a fabless semiconductor company and a spin-out of the University of Cambridge. We develop energy-efficient GaN-based power devices to make greener electronics possible and contribute to a more sustainable future.

Responsibilities

• Provide technical, multidisciplinary leadership for GaN power IC research and innovation projects
• Conduct feasibility studies of novel GaN IC concepts through simulations, evaluations, and design
• Liaise with experts in Analog IC Design, Reliability, Power Device Packaging, Testing, and Operations
• Identify and resolve technical critical paths within multidisciplinary teams
• Manage technology requirements and specifications in collaboration with Marketing, Business Development, and Application Engineering

Requirements

• Experience as an R&D Engineer in semiconductor device development, preferably wide bandgap power devices
• Knowledge of power semiconductor device physics, specifically GaN
• Expertise in at least one area: power device packaging, analog ICs, power semiconductors, GaN devices, semiconductor testing, or reliability
• Degree in a relevant engineering or science subject
• Ability to work in a fast-paced start-up environment
• Strong communication and presentation skills for technical audiences
• Willingness to travel internationally to work with partners

Preferred Qualifications

• Skills in power electronics
• Experience with semiconductor failure analysis
• Experience as a system or device technical lead
• Experience with FMEA, 8D problem solving, or Six Sigma
• Project management qualifications