RF Device Modelling & Characterisation Engineer

Responsibilities

• Perform on-wafer characterization of GaN devices, including Pulsed DC-IVs and S-parameters up to 67GHz using a VNA
• Conduct on-wafer Active Load-Pull measurements to validate large-signal performance
• Develop and implement advanced de-embedding and parasitic extraction techniques
• Develop and maintain GaN HEMT compact device models for Keysight ADS and Cadence AWR Microwave Office platforms
• Verify passive models using 2.5D and 3D electromagnetic simulation in conjunction with Foundry PDK models
• Develop advanced automated processes, including the use of AI, for characterization and modeling efficiency
• Prepare detailed verification reports on GaN HEMT and passive models
• Collaborate with the MMIC design team to assess new fabrication processes and troubleshoot simulation discrepancies

Requirements

• Bachelor’s degree in Electrical Engineering, RF Engineering, or a related field
• 5+ years of experience in RF/microwave testing and applications engineering
• In-depth knowledge of RF device modeling and on-wafer characterization
• Proficiency with RF semiconductor test equipment including Probe Stations, Pulsed DC-IV, and VNA
• Familiarity with RF EDA tools such as Keysight ADS, Cadence AWR Microwave Office, or HFSS
• Strong software skills for process automation using Python, MATLAB, or C

About the Company

Microchip Technology Inc. is a leading semiconductor company dedicated to empowering innovation. With a global team of over 17,000 members, we design the technology that powers the world, serving markets in communications, radar, satellite, and more. We pride ourselves on a culture of trust, empowerment, and technical excellence.