Principal Memory Design Engineer, Pathfinding

Responsibilities

• Provide technical direction and design implementation for mixed-signal circuits strongly tied to memory cores
• Collaborate closely with physical design teams to ensure functionalities, timing closure, robustness, and power intent alignment
• Perform modeling and simulation of ICs using HSPICE or finesim
• Contribute to the definition, development, and analysis of mixed-signal circuits for DRAM and emerging memory technologies

Requirements

• Bachelor’s or Master’s degree in Electrical Engineering, Computer Engineering, or a related field
• 8+ years of experience in high-speed/bandwidth data-path design
• Proficiency with UNIX and Cadence design environments (Simulation, Schematic entry, SPF extraction)
• Experience with HSPICE or finesim modeling

Preferred Qualifications

• Memory core knowledge and design experience
• Experience with DDR or other high-performance memory architectures
• Expertise in clock-domain crossing (CDC), reset strategies, and low-power design
• Experience with semi-custom digital circuit design and analog circuit design

Benefits

• Comprehensive medical, dental, and vision plans
• Income protection programs for illness or injury
• Paid family leave
• Robust paid time-off program and paid holidays
• Additional compensation including bonuses and equity

About the Company

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.