Principal Medium Voltage Power MOSFET Design Engineer

Responsibilities

• Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology
• Develop TCAD simulation decks and propose advanced device design concepts
• Analyze wafer-level electrical test results and package-level performance data for each development iteration
• Lead yield improvement activities and support technology transfer to mass production
• Collaborate with process integration, application, marketing teams, and external foundry partners to drive innovation and product industrialization
• Contribute to the development of derivative products based on established and mature technology platforms

Requirements

• Ph.D. (preferred) or M.S. in Electrical Engineering, Physics, or a related field
• Up to 15 years of experience in power semiconductor device or process development
• Experience with Si-based MV shielded-gate trench MOSFETs
• Solid understanding of power device physics and semiconductor fabrication processes
• Hands-on experience with TCAD tools and simulation-based device analysis
• Intermediate-level proficiency in both written and spoken English

About the Company

Renesas is an embedded semiconductor solution provider driven by its purpose "To Make Our Lives Easier." As a leading expert in embedded processing, Renesas provides scalable and comprehensive semiconductor solutions for the automotive, industrial, infrastructure, and IoT industries. With a diverse team of over 21,000 professionals in more than 30 countries, we design and develop sustainable, power-efficient solutions that help people and communities thrive.