MTS/Principal Engineer, Metals Adv DRAM

Responsibilities

• Drive technical innovation and strategic decisions for Advanced DRAM technology roadmaps
• Lead process development for vapor/plasma etching, selective wet etching, and high aspect ratio processing
• Contribute to feasibility studies and proactively address technical challenges in metallization and surface prep
• Build and protect Micron Intellectual Property through innovative process research and equipment modification
• Collaborate with Process Integration, Dry Etch, CVD, Diffusion, Lithography, and CMP teams
• Influence technical and strategic decisions through regular interaction with senior management

Requirements

• 10+ years of experience in Materials Science, Physics, Chemistry, or Engineering (PhD research may be considered)
• Subject matter expertise in low resistive metallization, lateral contact silicidation, and high aspect-ratio metals fill
• Demonstrated experience leading significant projects in DRAM/NAND FEOL, MOL, CAP, or BEOL modules
• Deep understanding of solid-state physics, including transition metal oxides, surfaces, and interfaces
• Strong knowledge of chemical kinetics and their application to CVD, ALD, and PVD deposition processes

Preferred Qualifications

• Experience in semiconductor manufacturing, specifically within DRAM or Memory environments
• Proficiency with thin-film analysis techniques such as SIMS, XPS, EDS, AFM, SEM, TEM, or XRR
• Ability to incorporate AI, coding, automation, or data science into daily workflows
• Hands-on experience with thin film deposition equipment in a lab or clean-room setting
• Strong data analysis skills and ability to make inferences from large electrical and physical datasets

Benefits

• Comprehensive medical, dental, and vision plans
• Income protection programs and paid family leave
• Robust paid time-off program and paid holidays

About the Company

Micron Technology is a world leader in innovating memory and storage solutions. As a Fortune 500 company, we transform information into intelligence through foundational DRAM, NAND, and NOR Flash memory, as well as SSDs and HBM systems.