DRAM Design Engineer

Responsibilities

• Perform inverter ring oscillator simulations for model and technology benchmarking
• Define standard cell architecture and critical design rules for future DRAM nodes
• Design test structures to address technology power-performance metrics for new DRAM node test vehicles
• Develop and maintain key metrics for benchmarking each new design kit release
• Understand and provide key improvements for DRAM sense amplifier design across nodes
• Leverage Python and JMP for data analysis and decision-making automation

Requirements

• Master’s degree in Electrical Engineering or a related field
• Experience with semiconductor technology, including design rules and test structure design
• Knowledge of CMOS device physics and fabrication processes
• Proficiency in the design, layout, and simulation of logic gates and small circuits
• Understanding of DRAM sense amplifier design
• Proficiency in Python and Verilog programming

Benefits

• Choice of medical, dental, and vision plans
• Income protection programs for illness or injury
• Paid family leave
• Robust paid time-off program and paid holidays

About the Company

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.